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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3680 ESCRIPTION With TO-3PN package High voltage switching transistor APPLICATIONS Switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg Collector-base voltage PARAMETER CHA IN Collector current Base current Collector-emitter voltage Emitter-base voltage ES NG Open emitter Open base MIC E CONDITIONS OND TOR UC VALUE 900 800 7 7 14 3.5 UNIT V V V A A A W ae ae Open collector Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae 120 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3680 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ;IB=0 IC=3A ,IB=0.6A IC=3A ;IB=0.6A VCB=800V; IE=0 VEB=7V; IC=0 IC=3A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IC=2A ; VCE=12V 10 105 MIN 800 0.5 1.2 100 100 30 pF MHz |I |I TYP. MAX UNIT V V V A A SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE Cob fT Switching times ton tstg tf Fall time Turn-on time CHA IN Storage time E SEM NG IC=3A;IB1=0.45A; IB2=-1.5A;RL=83| VCC=250V OND IC TOR UC 6 1.0 5.0 1.0 |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3680 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3680 CHA IN E SEM NG OND IC TOR UC 4 |
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